Display apparatus and method of manufacturing the same

ABSTRACT

A display apparatus includes a base substrate including a hole area through which light passes, a hole peripheral area which is a non-display area surrounding the hole area, and a display area surrounding the hole peripheral area, where the display area includes pixels to display an image, an insulating layer disposed on the base substrate in the hole peripheral area and the display area except for the hole area, a via insulating layer disposed on the insulating layer in the hole peripheral area and the display area except for the hole area, and a thin film encapsulation layer including first and second inorganic films which are disposed in the hole peripheral area and the display area except for the hole area on the base substrate on which the via insulating layer is disposed.

This application claims priority to Korean Patent Application No.10-2019-0147712, filed on Nov. 18, 2019, and all the benefits accruingtherefrom under 35 U.S.C. § 119, the content of which in its entirety isherein incorporated by reference.

BACKGROUND 1. Field

Embodiments relate generally to a display apparatus and a method ofmanufacturing the display apparatus. More particularly, embodiments ofthe invention relate to a display apparatus including a hole area and amethod of manufacturing the display apparatus.

2. Description of the Related Art

Recently, as the technology improves, display products having smallersizes, lighter weights, and superior performance have been produced.Conventional cathode ray tube (CRT) televisions have been widely usedfor display apparatuses with many advantages in terms of performance andprice. Recently, however, a display apparatus such as a plasma displayapparatus, a liquid crystal display apparatus, and an organic lightemitting diode display apparatus that overcomes weak points of the CRTin terms of miniaturization or portability and has advantages such asminiaturization, light weight, and low power consumption has beenspotlighted.

SUMMARY

Recently, a bezel-less display apparatus, a display apparatus includinga notch, and the like have been developed to enlarge a display area ofthe display apparatus. In a display apparatus, for example, a hole maybe formed in a display area to arrange a camera or the like in the hole,and the like to enlarge the display area. In such a display apparatus,it is desired to implement a panel design which takes into considerationthe existence of the hole.

Embodiments provide a display apparatus including a hole area located ina display area, where a manufacturing cost of the display apparatus isreduced and a display quality of the display apparatus is improved.

Embodiments provide a method of manufacturing the display apparatus.

According to an embodiment, a display apparatus includes a basesubstrate including a hole area through which light passes, a holeperipheral area which is a non-display area surrounding the hole area,and a display area surrounding the hole peripheral area, where thedisplay area includes a plurality of pixels to display an image, aninsulating layer disposed on the base substrate in the hole peripheralarea and the display area except for the hole area, a via insulatinglayer disposed on the insulating layer in the hole peripheral area andthe display area except for the hole area, and a thin film encapsulationlayer including a first inorganic film and a second inorganic film whichare disposed in the hole peripheral area and the display area except forthe hole area on the base substrate on which the via insulating layer isdisposed.

In an embodiment, the base substrate may be a rigid substrate.

In an embodiment, a roughness of a surface of the base substrate in thehole area may be greater than a roughness of the surface of the basesubstrate in the hole peripheral area and the display area.

In an embodiment, the display apparatus may further include a firstelectrode disposed on the via insulating layer in the display area, alight emitting layer disposed on the first electrode, and a secondelectrode disposed on the light emitting layer.

In an embodiment, a groove surrounding the hole area may be defined inthe via insulating layer in the hole peripheral area.

In an embodiment, the second electrode may have a disconnected portiondisposed in the groove of the via insulating layer.

In an embodiment, the second electrode may be spaced apart from the holearea.

In an embodiment, the light emitting layer may include a hole injectionlayer, a hole transport layer, an electron transport layer, and anelectron injection layer which are disposed between the second electrodeand the base substrate, where the light emitting layer may be disposedto correspond to the plurality of pixels. In such an embodiment, thehole injection layer, the hole transport layer, the electron transportlayer, and the electron injection layer may be spaced apart from thehole area.

In an embodiment, the first inorganic film of the thin filmencapsulation layer may be disposed directly on the base substrate inthe hole peripheral area.

In an embodiment, the hole peripheral area may include a heat affectedzone at a portion of the hole peripheral area in contact with the holearea. In such an embodiment, the via insulating layer may be carbonizedin the heat affected zone.

In an embodiment, the hole peripheral area may include a heat affectedzone at a portion of the hole peripheral area in contact with the holearea. In such an embodiment, a height of the via insulating layer in theheat affected zone may be greater than a height of the via insulatinglayer in the display area and the hole peripheral area.

In an embodiment, the display apparatus may further include a coverwindow disposed on the thin film encapsulation layer and an opticalclear adhesive film disposed between the thin film encapsulation layerand the cover window. In such an embodiment, the base substrate and thecover window may be spaced apart from each other in the hole area.

In an embodiment, a hole optical clear adhesive film may be disposedbetween the base substrate and the cover window in the hole area.

In an embodiment, the display apparatus may further include a coverwindow disposed on the thin film encapsulation layer and an opticalclear resin disposed between the cover window and the thin filmencapsulation layer. In such an embodiment, the optical clear resin maybe disposed between the base substrate and the cover window in the holearea.

According to an embodiment, a method of manufacturing a displayapparatus including a hole area through which light passes, a holeperipheral area which is a non-display area surrounding the hole area,and a display area surrounding the hole peripheral area, where thedisplay area includes a plurality of pixels to display an image, mayinclude providing an insulating layer on a base substrate, providing avia insulating layer on the insulating layer, sequentially providing afirst electrode, a light emitting layer, and a second electrode on thevia insulating layer, providing a thin film encapsulation layerincluding a first inorganic film and a second inorganic film on thesecond electrode, and exposing a top surface of the base substrate byremoving layers on the base substrate in the hole area.

In an embodiment, the exposing the top surface of the base substrate mayinclude removing the layers on the base substrate in the hole area byusing a laser. In such an embodiment, a roughness of a surface of thebase substrate in the hole area may be greater than a roughness of thesurface of the base substrate in the hole peripheral area and thedisplay area.

In an embodiment, when the top surface of the base substrate is exposed,a heat affected zone may be formed at a portion of the hole peripheralarea in contact with the hole area by the laser. In such an embodiment,the via insulating layer may be carbonized in the heat affected zone.

In an embodiment, the providing the via insulating layer may furtherinclude forming a groove surrounding the hole area in the via insulatinglayer in the hole peripheral area.

In an embodiment, the exposing the top surface of the base substrate mayinclude removing layers on the base substrate in a part of the holeperipheral area after the second electrode is provided.

In an embodiment, the method may further include providing an opticalclear adhesive film or an optical clear resin on the thin filmencapsulation layer and attaching a cover window onto the optical clearadhesive film or the optical clear resin.

In embodiments of the invention, a display apparatus may include a basesubstrate which is a rigid substrate and seal a light emitting layer byusing a thin film encapsulation layer while forming a hole area in whichan optical module is to be disposed such that a manufacturing cost ofthe display apparatus may be reduced and a display quality thereof maybe improved. In such embodiments, layered structures except for the basesubstrate may be removed from the hole area, such that performance ofthe optical module may be prevented from deteriorating due to aninterference phenomenon or the like caused by an air gap.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a display apparatus according to anembodiment.

FIG. 2 is a sectional view showing a periphery of a hole area of thedisplay apparatus of FIG. 1.

FIG. 3 is an enlarged sectional view showing a heat affected zone of thedisplay apparatus of FIG. 2.

FIG. 4 is a sectional view showing a display apparatus according to analternative embodiment.

FIG. 5 is a sectional view showing a display apparatus according toanother alternative embodiment.

FIG. 6 is a sectional view showing a display apparatus according toanother alternative embodiment.

FIG. 7 is a sectional view showing a display apparatus according toanother alternative embodiment.

FIG. 8 is a sectional view showing a display apparatus according toanother alternative embodiment.

FIGS. 9A and 9B are sectional views showing an embodiment of a method ofmanufacturing the display apparatus of FIG. 2.

FIGS. 10A to 10C are sectional views showing an embodiment of a methodof manufacturing the display apparatus of FIG. 4.

FIG. 11 is a block diagram illustrating an electronic device accordingto an embodiment.

FIG. 12A is a diagram illustrating an embodiment in which the electronicdevice of FIG. 11 is implemented as a television.

FIG. 12B is a diagram illustrating an embodiment in which the electronicdevice of FIG. 11 is implemented as a smart phone.

DETAILED DESCRIPTION

The invention now will be described more fully hereinafter withreference to the accompanying drawings, in which various embodiments areshown. This invention may, however, be embodied in many different forms,and should not be construed as limited to the embodiments set forthherein. Rather, these embodiments are provided so that this disclosurewill be thorough and complete, and will fully convey the scope of theinvention to those skilled in the art. Like reference numerals refer tolike elements throughout.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be present therebetween. In contrast, when an element isreferred to as being “directly on” another element, there are nointervening elements present.

It will be understood that, although the terms “first,” “second,”“third” etc. may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, “a first element,” “component,” “region,” “layer” or“section” discussed below could be termed a second element, component,region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein,“a”, “an,” “the,” and “at least one” do not denote a limitation ofquantity, and are intended to include both the singular and plural,unless the context clearly indicates otherwise. For example, “anelement” has the same meaning as “at least one element,” unless thecontext clearly indicates otherwise. “At least one” is not to beconstrued as limiting “a” or “an.” “Or” means “and/or.” As used herein,the term “and/or” includes any and all combinations of one or more ofthe associated listed items. It will be further understood that theterms “comprises” and/or “comprising,” or “includes” and/or “including”when used in this specification, specify the presence of statedfeatures, regions, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, regions, integers, steps, operations, elements,components, and/or groups thereof.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The term “lower,” cantherefore, encompasses both an orientation of “lower” and “upper,”depending on the particular orientation of the figure. Similarly, if thedevice in one of the figures is turned over, elements described as“below” or “beneath” other elements would then be oriented “above” theother elements. The terms “below” or “beneath” can, therefore, encompassboth an orientation of above and below.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Embodiments are described herein with reference to cross sectionillustrations that are schematic illustrations of idealized embodiments.As such, variations from the shapes of the illustrations as a result,for example, of manufacturing techniques and/or tolerances, are to beexpected. Thus, embodiments described herein should not be construed aslimited to the particular shapes of regions as illustrated herein butare to include deviations in shapes that result, for example, frommanufacturing. For example, a region illustrated or described as flatmay, typically, have rough and/or nonlinear features. Moreover, sharpangles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the present claims.

Hereinafter, embodiments of the invention will be described in detailwith reference to the accompanying drawings.

FIG. 1 is a plan view showing a display apparatus according to anembodiment.

Referring to FIG. 1, an embodiment of a display apparatus 10 may includea display area DA, a hole peripheral area HPA defined in the displayarea DA, and a hole area HA defined in the hole peripheral area HPA.

The hole area HA may allow light to pass therethrough, so that anoptical module (see 400 in FIG. 2) may overlap, e.g., be disposed below,the hole area HA. The hole peripheral area HPA is a non-display areasurrounding the hole area HA, and signal wires and the like may bedisposed in the hole peripheral area HPA.

The display area DA is an area for displaying an image, and a pluralityof pixels (not shown) may be disposed in the display area DA. Each ofthe pixels may include a light emitting structure, and a pixel circuitincluding a thin film transistor electrically connected to the lightemitting structure. The display area DA may be on a plane defined by afirst direction D1 and a second direction D2 perpendicular to the firstdirection D1 to have a rectangular shape elongated in the seconddirection D2. A corner portion of the display area DA may have a roundedshape.

In an embodiment, although not shown, a peripheral area, which is anon-display area in which an image is not displayed, may be definedalong an edge of the display apparatus 10.

FIG. 2 is a sectional view showing a periphery of a hole area of thedisplay apparatus of FIG. 1.

Referring to FIGS. 1 and 2, an embodiment of the display apparatus mayinclude a base substrate 100, a buffer layer 110, an active pattern ACTof a thin film transistor TFT, a first insulating layer 120, a gateconductive layer, a second insulating layer 130, a first source-drainconductive layer, a first via insulating layer VIA1, a secondsource-drain conductive layer, a second via insulating layer VIA2, apixel defining layer PDL, a light emitting structure 180, and a thinfilm encapsulation layer 190. The display apparatus may further includean optical module 400.

The base substrate 100 may include or be formed of a transparent oropaque material. The base substrate 100 may be a rigid substrate. In oneembodiment, for example, the base substrate 100 may be a quartzsubstrate, a synthetic quartz substrate, a calcium fluoride substrate, afluorine-doped quartz substrate (F-doped quartz substrate), a soda limeglass substrate, a non-alkali glass substrates, or the like.

The buffer layer 110 may be disposed on the base substrate 100 in thehole peripheral area HPA and the display area DA except for the holearea HA. The buffer layer 110 may effectively prevent metal atoms orimpurities from diffusing from the base substrate 100 into the activepattern ACT, and may control a heat transfer rate during acrystallization process for forming the active pattern ACT to obtain asubstantially uniform active pattern ACT. The buffer layer 110 may beprovided or formed by using an inorganic insulating material.

The active pattern ACT may be disposed on the buffer layer 110 in thedisplay area DA. The active pattern ACT may include amorphous silicon orpolycrystalline silicon. In an alternative embodiment, the activepattern ACT may include an oxide of at least one material selected fromindium (In), gallium (Ga), stannum (Sn), zirconium (Zr), vanadium (V),hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium(Ti), and zinc (Zn). The active pattern ACT may include a drain regionand a source region, which are doped with impurities, and a channelregion disposed between the drain region and the source region.

The first insulating layer 120 may be disposed on the buffer layer 110in the hole peripheral area HPA and the display area DA except for thehole area HA. The first insulating layer 120 may be disposed along aprofile of the active pattern ACT with a substantially uniform thicknessto cover the active pattern ACT on the buffer layer 110. The firstinsulating layer 120 may have a multilayer structure or include aplurality of layers. The first insulating layer 120 may be provided orformed by using an inorganic insulating material.

The gate conductive layer may be disposed on the first insulating layer120. The gate conductive layer may include a gate electrode GE whichoverlaps the active pattern ACT of the thin film transistor TFT, and asignal wire (not shown) disposed in the hole peripheral area HPA. Thegate conductive layer may be provided or formed by using a metal, analloy, metal nitride, conductive metal oxide, a transparent conductivematerial, or the like.

The second insulating layer 130 may be disposed in the hole peripheralarea HPA and the display area DA except for the hole area HA on thefirst insulating layer 120 on which the gate conductive layer isdisposed. The second insulating layer 130 may be disposed along aprofile of the gate conductive layer with a substantially uniformthickness to cover the gate conductive layer on the first insulatinglayer 120. The second insulating layer 130 may have a multilayerstructure or include a plurality of layers. The second insulating layer130 may be provided or formed by using an inorganic insulating material.

The first source-drain conductive layer may be disposed on the secondinsulating layer 130. The first source-drain conductive layer mayinclude a source electrode SE and a drain electrode DE, which areelectrically connected to the source region and the drain region of theactive pattern ACT of the thin film transistor TFT, respectively,through contact holes formed through the second insulating layer 130 andthe first insulating layer 120. The first source-drain conductive layermay further include a signal wire (not shown) disposed in the holeperipheral area HPA. The first source-drain conductive layer may beprovided or formed by using a metal, an alloy, metal nitride, conductivemetal oxide, a transparent conductive material, or the like.

The first via insulating layer VIA1 may be disposed in the holeperipheral area HPA and the display area DA except for the hole area HAon the second insulating layer 130 on which the first source-drainconductive layer is disposed. The first via insulating layer VIA1 mayhave a single-layer structure, and may also have a multilayer structureincluding at least two insulating films. The first via insulating layerVIA1 may be formed by using an organic material such as a photoresist,an acryl-based resin, a polyimide-based resin, a polyamide-based resin,and a siloxane-based resin.

A groove VIAG surrounding the hole area HA may be defined or formed inthe first via insulating layer VIA1 in the hole peripheral area HPA. Asshown in the drawings, the groove VIAG may be defined or formed throughthe first via insulating layer VIA1 to expose the second insulatinglayer 130. In an embodiment, a plurality of grooves VIAG may be definedor formed.

The second source-drain conductive layer may be disposed on the firstvia insulating layer VIA1. The second source-drain conductive layer mayinclude a contact pad CP disposed in the display area DA, and a patternSD2P disposed on the groove VIAG of the first via insulating layer VIA1in the hole peripheral area HPA. The contact pad CP may be electricallyconnected to the drain electrode DE of the thin film transistor TFTthrough a contact hole defined through the first via insulating layerVIA1. The pattern SD2P may have an undercut adjacent to the groove VIAG.Accordingly, some layers of the light emitting structure 180, which willdescribed below, may have a structure disconnected in the groove VIAG.The second source-drain conductive layer may further include a signalwire (not shown) disposed in the hole peripheral area HPA. The secondsource-drain conductive layer may be provided or formed by using ametal, an alloy, metal nitride, conductive metal oxide, a transparentconductive material, or the like.

The second via insulating layer VIA2 may be disposed in the holeperipheral area HPA and the display area DA except for the hole area HAon the first via insulating layer VIA1 on which the second source-drainconductive layer is disposed. The second via insulating layer VIA2 mayhave a single-layer structure, and may also have a multilayer structureincluding at least two insulating films. The second via insulating layerVIA2 may be provided or formed by using an organic material such as aphotoresist, an acryl-based resin, a polyimide-based resin, apolyamide-based resin, and a siloxane-based resin.

The light emitting structure 180 may include a first electrode 181, alight emitting layer 182, and a second electrode 183.

The first electrode 181 may be disposed on the second via insulatinglayer VIA2. The first electrode 181 may be electrically connected to thethin film transistor TFT. In an embodiment, the first electrode 181 maybe formed by using a reflective material or a transmissive materialdepending on a light emitting scheme of the display apparatus. In oneembodiment, for example, the first electrode 181 may include at leastone material selected from aluminum, an aluminum-containing alloy,aluminum nitride, silver, a silver-containing alloy, tungsten, tungstennitride, copper, a copper-containing alloy, nickel, chromium, chromiumnitride, molybdenum, a molybdenum-containing alloy, titanium, titaniumnitride, platinum, tantalum, tantalum nitride, neodymium, scandium,strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide,indium oxide, gallium oxide, indium zinc oxide, and the like. Suchmaterials may be used alone or in combination with each other. In anembodiment, the first electrode 181 may have a single-layer structure ora multilayer structure including a metal film, an alloy film, a metalnitride film, a conductive metal oxide film, and/or a transparentconductive material film.

The pixel defining layer PDL may be disposed on the second viainsulating layer VIA2 on which the first electrode 181 is disposed. Thepixel defining layer PDL may be provided or formed by using an organicmaterial and the like. In one embodiment, for example, the pixeldefining layer PDL may be provided or formed by using a photoresist, apolyacryl-based resin, a polyimide-based resin, an acryl-based resin, asilicone compound, or the like. According to an embodiment, the pixeldefining layer PDL may be etched to form an opening which partiallyexposes the first electrode 181.

At least one selected from the first via insulating layer VIA1, thesecond via insulating layer VIA2, and the pixel defining layer PDL maydefined or form a dam DAM in the hole peripheral area HPA. The dam DAMmay effectively prevent an organic film 192 of the thin filmencapsulation layer 190, which will be described below, from overflowingin a direction toward the hole area HA.

The light emitting layer 182 may be disposed on the first electrode 181exposed through the opening of the pixel defining layer PDL. In anembodiment, the light emitting layer 182 may extend onto a side wall ofthe opening of the pixel defining layer PDL. In an embodiment, the lightemitting layer 182 may have a multilayer structure including an organicemission layer EL, a hole injection layer HIL, a hole transport layerHTL, an electron transport layer ETL, an electron injection layer EIL,or the like. In an alternative embodiment, except for the organicemission layer, the hole injection layer, the hole transport layer, theelectron transport layer, the electron injection layer, and the like maybe commonly formed to correspond to a plurality of pixels. The organicemission layer of the light emitting layer 182 may be provided or formedby using light emitting materials for generating different color lightssuch as red light, green light, and blue light according to each of thepixels of the display apparatus. According to an alternative embodiment,the organic emission layer of the light emitting layer 182 may have astructure in which a plurality of light emitting materials forimplementing different color lights such as red light, green light, andblue light are stacked to emit white light. In such an embodiment, theabove light emitting structures may be commonly formed to correspond tothe pixels, and the pixels may be classified by a color filter layer.

The second electrode 183 may be disposed on the pixel defining layer PDLand the light emitting layer 182. In an embodiment, the second electrode183 may include a transmissive material or a reflective materialdepending on the light emitting scheme of the display apparatus. In oneembodiment, for example, the second electrode 183 may include at leastone material selected from aluminum, an aluminum-containing alloy,aluminum nitride, silver, a silver-containing alloy, tungsten, tungstennitride, copper, a copper-containing alloy, nickel, chromium, chromiumnitride, molybdenum, a molybdenum-containing alloy, titanium, titaniumnitride, platinum, tantalum, tantalum nitride, neodymium, scandium,strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide,indium oxide, gallium oxide, indium zinc oxide, and the like. Suchmaterials may be used alone or in combination with each other. In anembodiment, the second electrode 183 may have a single-layer structureor a multilayer structure including a metal film, an alloy film, a metalnitride film, a conductive metal oxide film, and/or a transparentconductive material film.

The thin film encapsulation layer 190 may be disposed on the secondelectrode 183. The thin film encapsulation layer 190 may effectivelyprevent moisture and oxygen from penetrating from an outside. The thinfilm encapsulation layer 190 may include at least one organic film andat least one inorganic film. The at least one organic film and the atleast one inorganic film may be alternately stacked on each other. Inone embodiment, for example, the thin film encapsulation layer 190 mayinclude a first inorganic film 191, a second inorganic film 193, and anorganic film 192 disposed between the first inorganic film 191 and thesecond inorganic film 193, but embodiments are not limited thereto. Thethin film encapsulation layer 190 may not be formed in the hole area HA,so that a top surface of the base substrate 100 may be exposed in thehole area HA.

In an embodiment, roughness of the top surface of the base substrate 100in the hole area HA may be greater than roughness of the surface of thebase substrate 100 in the hole peripheral area HPA and the display areaDA. In such an embodiment, the top surface of the base substrate 100 maybe slightly damaged in a process of removing the layered structuredisposed on the base substrate 100 in the hole area HA by using a laseror the like. In casein such an embodiment, an amount of the laserprocessing in the hole area HA may be greater in an outer peripheralportion which is an edge portion of the hole area HA (a portion adjacentto the hole peripheral area) than in a central portion of the hole areaHA, so that the roughness may become greater in the outer peripheralportion than in the central portion of the hole area HA.

The optical module 400 may be disposed under the base substrate 100(i.e., in a third direction D3) to overlap the hole area HA. In oneembodiment, for example, the optical module 410 may include: a cameramodule for capturing (or recognizing) an image of an object; a facerecognition sensor module for detecting a face of a user; a pupilrecognition sensor module for detecting a pupil of the user; anacceleration sensor module and a geomagnetic sensor module fordetermining a movement of the display apparatus; a proximity sensormodule and an infrared sensor module for detecting proximity withrespect to a front side of the display apparatus; an illuminance sensormodule for measuring a degree of brightness when left in a pocket or abag; or the like.

FIG. 3 is an enlarged sectional view showing a heat affected zone of thedisplay apparatus of FIG. 2.

Referring to FIGS. 2 and 3, in an embodiment, the hole peripheral areaHPA may include a heat affected zone HAZ formed at a portion of the holeperipheral area HPA making contact with the hole area HA. In the processof removing the layered structure disposed on the base substrate 100 inthe hole area HA by using the laser or the like, the heat affected zoneHAZ is an area in which heat affects the layered structure at a portionadjacent to the hole area HA.

The first via insulating layer VIA1 may be partially carbonized in theheat affected zone HAZ (a hatched portion in the drawing). A height h2of the first via insulating layer VIA1 in the heat affected zone HAZ maybe greater than a height h1 of the first via insulating layer VIA1 inthe display area DA and the hole peripheral area HPA. In the heataffected zone HAZ, the first via insulating layer VIA1 including anorganic insulating material that may be easily deformed by the heat maybe thermally deformed, thereby being carbonized or swelled.

FIG. 4 is a sectional view showing a display apparatus according to analternative embodiment.

Referring to FIGS. 1 and 4, an embodiment of the display apparatus mayinclude a base substrate 100, a buffer layer 110, an active pattern ACTof a thin film transistor TFT, a first insulating layer 120, a gateconductive layer, a second insulating layer 130, a source-drainconductive layer, a via insulating layer VIA, a pixel defining layerPDL, a light emitting structure 180, and a thin film encapsulation layer190. The display apparatus may further include an optical module 400.

The base substrate 100 may include or be formed of a transparent oropaque material. The base substrate 100 may be a rigid substrate.

The buffer layer 110 may be disposed on the base substrate 100 in thedisplay area DA and a portion of the hole peripheral area HPA except forthe hole area HA. The buffer layer 110 may be spaced apart from the holearea HA.

The active pattern ACT of the thin film transistor TFT may be disposedon the buffer layer 110 in the display area DA.

The first insulating layer 120 may be disposed on the buffer layer 110in the display area DA and a portion of the hole peripheral area HPAexcept for the hole area HA.

The gate conductive layer may be disposed on the first insulating layer120. The gate conductive layer may include a gate electrode GE whichoverlaps the active pattern ACT of the thin film transistor TFT.

The second insulating layer 130 may be disposed in the display area DAand a portion of the hole peripheral area HPA except for the hole areaHA on the first insulating layer 120 on which the gate conductive layeris disposed.

The source-drain conductive layer may be disposed on the secondinsulating layer 130. The source-drain conductive layer may include asource electrode SE and a drain electrode DE, which are electricallyconnected to the source region and the drain region of the activepattern ACT of the thin film transistor TFT, respectively, throughcontact holes defined through the second insulating layer 130 and thefirst insulating layer 120.

The via insulating layer VIA may be disposed in the display area DA anda portion of the hole peripheral area HPA except for the hole area HA onthe second insulating layer 130 on which the source-drain conductivelayer is disposed.

The light emitting structure 180 may include a first electrode 181, alight emitting layer 182, and a second electrode 183.

The first electrode 181 may be disposed on the via insulating layer VIA.

The pixel defining layer PDL may be disposed on the via insulating layerVIA on which the first electrode 181 is disposed.

The pixel defining layer PDL may define or form a dam DAM in the holeperipheral area HPA.

The light emitting layer 182 may be disposed on the first electrode 181exposed through an opening of the pixel defining layer PDL.

The second electrode 183 may be disposed on the pixel defining layer PDLand the light emitting layer 182.

The thin film encapsulation layer 190 may be disposed on the secondelectrode 183. The thin film encapsulation layer 190 may include atleast one organic film and at least one inorganic film. The at least oneorganic film and the at least one inorganic film may be alternatelystacked on each other. In one embodiment, for example, the thin filmencapsulation layer 190 may include a first inorganic film 191, a secondinorganic film 193, and an organic film 192 disposed between the firstinorganic film 191 and the second inorganic film 193, but embodimentsare not limited thereto.

The first inorganic film 191 of the thin film encapsulation layer 190may make contact with the base substrate 100 or be disposed directly onthe base substrate 100 in the hole peripheral area HPA.

In such an embodiment, the light emitting layer 182 may include a holeinjection layer, a hole transport layer, an electron transport layer,and an electron injection layer which are disposed between the secondelectrode 183 and the base substrate 100 and formed to correspond to aplurality of pixels. Since the light emitting layer 182 is cut awaytogether with the second electrode 183 during a manufacturing process tobe spaced apart from the hole area HA in the hole peripheral area HPA,an organic material of the light emitting layer 182 may be effectivelyprevented from being affected by external influences from the hole areaHA.

In an embodiment, in a process of removing a layered structure disposedon the base substrate 100 in the hole area HA by using a laser or thelike, only the first inorganic film 191 and the second inorganic film193 of the thin film encapsulation layer 190 are disposed in a heataffected zone HAZ in which heat affects the layered structure at aportion adjacent to the hole area HA, so that an influence due tothermal deformation may be minimized.

FIG. 5 is a sectional view showing a display apparatus according toanother alternative embodiment.

The display apparatus shown in FIG. 5 is substantially the same as thedisplay apparatus of FIG. 2 except that the display apparatus of FIG. 5further includes an optical clear adhesive film OCA and a cover windowWD. The same or like elements shown in FIG. 5 have been labeled with thesame reference characters as used above to describe the embodiments ofthe display apparatus shown in FIG. 2, and any repetitive detaileddescription thereof will hereinafter be omitted or simplified.

In an embodiment, as shown in FIG. 5, the display apparatus may furtherinclude a cover window WD disposed on the thin film encapsulation layer190, and an optical clear adhesive film OCA disposed between the thinfilm encapsulation layer 190 and the cover window WD.

The optical clear adhesive film OCA may include an adhesive materialsuch as a transmissive resin and a transmissive film inserted into theadhesive material. In one embodiment, for example, the transmissiveresin may be a photo-cured resin. The photo-cured resin may be amaterial obtained by polymerizing a photocurable resin including amonomer, an oligomer, or the like into a polymer by irradiating lighthaving a specific wavelength to be cured to exhibit adhesive strength.In an embodiment, the photocurable resin may be a material that is curedby irradiating ultraviolet (“UV”) rays, but embodiments are not limitedthereto. The photocurable resin may include acryl, a (meth)acryl-basedcompound, or the like. In an embodiment, the photocurable resin mayfurther include a photoinitiator which generates free radicals or ionsby photostimulation such as ultraviolet rays. In one embodiment, forexample, the photoinitiator include α-hydroxyketone, mono- orbis-acylphosphine oxide, benzophenone, thioxanthone, ketosulfone, benzylketal, phenylglyoxylate, borate, titanocene, an oxime ester-basedphotoinitiator, or the like, but embodiments are not limited thereto.

The base substrate 100 and the cover window WD may be spaced apart fromeach other in the hole area HA. In such an embodiment, occurrence of aninterference phenomenon caused by an air gap SP between the basesubstrate 100 and the cover window WD may be reduced in the hole area HAsince a distance from the top surface of the base substrate 100 to thecover window WD is sufficiently greater than a distance between the basesubstrate and an encapsulation substrate.

FIG. 6 is a sectional view showing a display apparatus according toanother alternative embodiment.

The display apparatus shown in FIG. 6 is substantially the same as thedisplay apparatus of FIG. 5 except that the display apparatus of FIG. 6includes an optical clear resin OCR instead of the optical clearadhesive film OCA. The same or like elements shown in FIG. 6 have beenlabeled with the same reference characters as used above to describe theembodiments of the display apparatus shown in FIG. 5, and any repetitivedetailed description thereof will hereinafter be omitted or simplified.

In an embodiment, as shown in FIG. 6, the display apparatus may furtherinclude a cover window WD disposed on the thin film encapsulation layer190, and an optical clear resin OCR disposed between the cover window WDand the thin film encapsulation layer 190. The optical clear resin OCRmay be disposed between the base substrate 100 and the cover window WDin the hole area HA.

In such an embodiment, there is no air gap between the base substrate100 and the cover window WD in the hole area HA, such that occurrence ofan interference phenomenon caused by the air gap may be reduced in thehole area HA.

The optical clear resin OCR may include an adhesive material such as atransmissive resin. In one embodiment, for example, the transmissiveresin may be a photo-cured resin. The photo-cured resin may be amaterial obtained by polymerizing a photocurable resin including amonomer, an oligomer, or the like into a polymer by irradiating lighthaving a specific wavelength to be cured to exhibit adhesive strength.In an embodiment, the photocurable resin may be a material that is curedby irradiating UV rays, but embodiments are not limited thereto. Thephotocurable resin may include acryl, a (meth)acryl-based compound, orthe like. In an embodiment, the photocurable resin may further include aphotoinitiator which generates free radicals or ions by photostimulationsuch as ultraviolet rays. In one embodiment, for example, thephotoinitiator include α-hydroxyketone, mono- or bis-acylphosphineoxide, benzophenone, thioxanthone, ketosulfone, benzyl ketal,phenylglyoxylate, borate, titanocene, an oxime ester-basedphotoinitiator, or the like, but embodiments are not limited thereto.

FIG. 7 is a sectional view showing a display apparatus according toanother alternative embodiment.

The display apparatus shown in FIG. 7 may be substantially the same asthe display apparatus of FIG. 6 except that the display apparatus ofFIG. 7 further includes an optical clear adhesive film OCA. The same orlike elements shown in FIG. 7 have been labeled with the same referencecharacters as used above to describe the embodiments of the displayapparatus shown in FIG. 6, and any repetitive detailed descriptionthereof will hereinafter be omitted or simplified.

In an embodiment, as shown in FIG. 7, the display apparatus may furtherinclude a cover window WD disposed on the thin film encapsulation layer190, and an optical clear resin OCR and the optical clear adhesive filmOCA disposed between the cover window WD and the thin film encapsulationlayer 190.

The optical clear resin OCR may be filled in a space between the basesubstrate 100 and the optical clear adhesive film OCA in the hole areaHA and the hole peripheral area HPA. Accordingly, in such an embodiment,there is no air gap between the base substrate 100 and the cover windowWD in the hole area HA, such that occurrence of an interferencephenomenon caused by the air gap may be reduced in the hole area HA.

FIG. 8 is a sectional view showing a display apparatus according toanother alternative embodiment.

The display apparatus shown in FIG. 8 is substantially the same as thedisplay apparatus of FIG. 5 except that the display apparatus of FIG. 8further includes a hole optical clear adhesive film HOCA. The same orlike elements shown in FIG. 8 have been labeled with the same referencecharacters as used above to describe the embodiments of the displayapparatus shown in FIG. 5, and any repetitive detailed descriptionthereof will hereinafter be omitted or simplified.

In an embodiment, as shown in FIG. 8, the display apparatus may furtherinclude a cover window WD disposed on the thin film encapsulation layer190, and an optical clear adhesive film OCA and a hole optical clearadhesive film HOCA disposed between the cover window WD and the thinfilm encapsulation layer 190.

The hole optical clear adhesive film HOCA may be disposed between thebase substrate 100 and the cover window WD in the hole area HA.Accordingly, there is no air gap between the base substrate 100 and thecover window WD in the hole area HA, such that occurrence of aninterference phenomenon caused by the air gap may be reduced in the holearea HA.

FIGS. 9A and 9B are sectional views showing an embodiment of a method ofmanufacturing the display apparatus of FIG. 2.

Referring to FIG. 9A, in an embodiment of a method of manufacturing thedisplay apparatus, a buffer layer 110 may be provided or formed on abase substrate 100. An active pattern ACT of a thin film transistor TFTmay be provided or formed on the buffer layer 110. A first insulatinglayer 120 may be provided or formed on the buffer layer 110 on which theactive pattern ACT is formed. A gate conductive layer including a gateelectrode GE may be provided or formed on the first insulating layer120. A second insulating layer 130 may be provided or formed on thefirst insulating layer 120 on which the gate conductive layer is formed.A first source-drain conductive layer including a source electrode SEand a drain electrode DE may be provided or formed on the secondinsulating layer 130. A first via insulating layer VIA1 having a grooveVIAG may be provided or formed in a hole peripheral area HPA on thesecond insulating layer 130 on which the first source-drain conductivelayer is formed. A second source-drain conductive layer including acontact electrode CP and a pattern SD2P may be provided or formed on thefirst via insulating layer VIA1. A second via insulating layer VIA2 maybe provided or formed on the first via insulating layer VIA1 on whichthe second source-drain conductive layer is formed. A first electrode181 of a light emitting structure 180 may be provided or formed on thesecond via insulating layer VIA2. A pixel defining layer PDL may beprovided or formed on the second via insulating layer VIA2 on which thefirst electrode 181 is formed. A light emitting layer 182 and a secondelectrode 183 of the light emitting structure 180 may be provided orformed on the first electrode 181. A thin film encapsulation layer 190including a first inorganic film 191, an organic film 192, and a secondinorganic film 193 may be provided or formed on the second electrode183.

Referring to FIG. 9B, a layered structure disposed on the base substrate100 may be removed in the hole area HA. In one embodiment, for example,the layered structure disposed on the base substrate 100 may be removedby using laser cutting or the like.

In an embodiment, in the process of removing the layered structuredisposed on the base substrate 100 in the hole area HA by using a laseror the like, a top surface of the base substrate 100 may be slightlydamaged. Accordingly, roughness of the top surface of the base substrate100 in the hole area HA may be greater than roughness of the surface ofthe base substrate 100 in the hole peripheral area HPA and the displayarea DA. In such an embodiment, an amount of the laser processing in thehole area HA may be greater in an outer peripheral portion which is anedge portion of the hole area HA (a portion adjacent to the holeperipheral area) than in a central portion of the hole area HA, suchthat the roughness may be greater in the outer peripheral portion thanin the central portion of the hole area HA.

In an embodiment, in the process of removing the layered structuredisposed on the base substrate 100 in the hole area HA by using thelaser or the like, heat may affect the layered structure at a portionadjacent to the hole area HA. Accordingly, a heat affected zone HAZ maybe formed at a portion making contact with the hole area HA.

In the heat affected zone HAZ, the first via insulating layer VIA1including an organic insulating material that may be easily deformed bythe heat may be thermally deformed to be carbonized or swelled.

Thereafter, a cover window, an optical module, and the like may beadditionally provided, so that the display apparatus may bemanufactured.

FIGS. 10A to 10C are sectional views showing an embodiment of a methodof manufacturing the display apparatus of FIG. 4.

Referring to FIG. 10A, in an embodiment of a method of manufacturing thedisplay device, a buffer layer 110 may be provided or formed on a basesubstrate 100. An active pattern ACT of a thin film transistor TFT maybe provided or formed on the buffer layer 110. A first insulating layer120 may be formed on the buffer layer 110 on which the active patternACT is formed. A gate conductive layer including a gate electrode GE maybe provided or formed on the first insulating layer 120. A secondinsulating layer 130 may be provided or formed on the first insulatinglayer 120 on which the gate conductive layer is formed. A source-drainconductive layer including a source electrode SE and a drain electrodeDE may be formed on the second insulating layer 130. A via insulatinglayer VIA may be provided or formed on the second insulating layer 130on which the source-drain conductive layer is formed. A first electrode181 of a light emitting structure 180 may be provided or formed on thevia insulating layer VIA. A pixel defining layer PDL may be formed onthe via insulating layer VIA on which the first electrode 181 is formed.A light emitting layer 182 and a second electrode 183 of the lightemitting structure 180 may be provided or formed on the first electrode181.

Thereafter, a layered structure disposed on the base substrate 100 maybe removed in the hole area HA and a portion of the hole peripheral areaHPA adjacent to the hole area HA. In one embodiment, for example, thelayered structure disposed on the base substrate 100 may be removed byusing laser cutting or the like.

Referring to FIG. 10B, a thin film encapsulation layer 190 including afirst inorganic film 191, an organic film 192, and a second inorganicfilm 193 may be provided or formed on the second electrode 183 and thebase substrate 100.

In such an embodiment, the first inorganic film 191 and the secondinorganic film 193 may be directly formed on the base substrate 100 inthe hole area HA in which the layered structure disposed on the basesubstrate 100 is removed by the laser cutting or the like, and a portionof the hole peripheral area HPA adjacent to the hole area HA.

Referring to FIG. 10C, the layered structure disposed on the basesubstrate 100 may be removed in the hole area HA. In one embodiment, forexample, the layered structure disposed on the base substrate 100 may beremoved by using the laser cutting or the like.

In such an embodiment, in the process of removing the layered structuredisposed on the base substrate 100 in the hole area HA by using a laseror the like, only the first inorganic film 191 and the second inorganicfilm 193 of the thin film encapsulation layer 190 are disposed in a heataffected zone HAZ in which heat affects the layered structure at aportion adjacent to the hole area HA, such that an influence due tothermal deformation may be minimized.

Thereafter, a cover window, an optical module, and the like may beadditionally provided, so that the display apparatus may bemanufactured.

FIG. 11 is a block diagram illustrating an electronic device accordingto an embodiment, FIG. 12A is a diagram illustrating an embodiment inwhich the electronic device of FIG. 11 is implemented as a television,and FIG. 12B is a diagram illustrating an embodiment in which theelectronic device of FIG. 11 is implemented as a smart phone.

Referring to FIGS. 11 to 12B, an embodiment of the electronic device 500may include a processor 510, a memory device 520, a storage device 530,an input/output (“I/O”) device 540, a power supply 550, and a displayapparatus 560. In such an embodiment, the display apparatus 560 may bethe display apparatus of FIG. 1. In an embodiment, the electronic device500 may further include a camera module CM. In an embodiment, theelectronic device 500 may further include a plurality of ports forcommunicating with a video card, a sound card, a memory card, auniversal serial bus (“USB”) device, other electronic devices, etc. Inan embodiment, as illustrated in FIG. 12A, the electronic device 500 maybe implemented as a television. In an alternative embodiment, asillustrated in FIG. 12B, the electronic device 500 may be implemented asa smart phone. However, the electronic device 500 is not limitedthereto. In one alternative embodiment, for example, the electronicdevice 500 may be implemented as a cellular phone, a video phone, asmart pad, a smart watch, a tablet personal computer (“PC”), a carnavigation system, a computer monitor, a laptop, a head mounted display(“HMD”) apparatus, etc.

The processor 510 may perform various computing functions. The processor510 may be a micro processor, a central processing unit (“CPU”), anapplication processor (“AP”), etc. The processor 510 may be coupled toother components via an address bus, a control bus, a data bus, etc. Inan embodiment, the processor 510 may be coupled to an extended bus suchas a peripheral component interconnection (“PCI”) bus. The memory device520 may store data for operations of the electronic device 500. In oneembodiment, for example, the memory device 520 may include at least onenon-volatile memory device such as an erasable programmable read-onlymemory (“EPROM”) device, an electrically erasable programmable read-onlymemory (“EEPROM”) device, a flash memory device, a phase change randomaccess memory “(PRAM”) device, a resistance random access memory(“RRAM”) device, a nano floating gate memory (“NFGM”) device, a polymerrandom access memory (“PoRAM”) device, a magnetic random access memory(“MRAM”) device, a ferroelectric random access memory (“FRAM”) device,etc., and/or at least one volatile memory device such as a dynamicrandom access memory (“DRAM”) device, a static random access memory(“SRAM”) device, a mobile DRAM device, etc. The storage device 530 mayinclude a solid state drive (“SSD”) device, a hard disk drive (“HDD”)device, a CD-ROM device, etc. The I/O device 540 may include an inputdevice such as a keyboard, a keypad, a mouse device, a touch-pad, atouch-screen, etc, and an output device such as a printer, a speaker,etc. The power supply 550 may provide power for operations of theelectronic device 500.

The display apparatus 560 may be coupled to other components via thebuses or other communication links. In an embodiment, the I/O device 540may include the display apparatus 560. In such an embodiment, asdescribed above, the display apparatus 560 may include a base substratewhich is a rigid substrate and seal a light emitting layer by using athin film encapsulation layer while forming a hole area in which anoptical module is to be disposed. Accordingly, a manufacturing cost ofthe display apparatus is reduced and display quality thereof isimproved. In such an embodiment, layered structures except for the basesubstrate are removed from the hole area, so that performance of theoptical module can be prevented from deteriorating due to aninterference phenomenon or the like caused by an air gap, as describedherein.

Embodiments of the invention may include a display apparatus and anelectronic device including the display apparatus, e.g., a smart phone,a cellular phone, a video phone, a smart pad, a smart watch, a tabletPC, a car navigation system, a television, a computer monitor, a laptop,a head mounted display apparatus, etc.

The invention should not be construed as being limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete and will fully conveythe concept of the invention to those skilled in the art.

While the invention has been particularly shown and described withreference to embodiments thereof, it will be understood by those ofordinary skill in the art that various changes in form and details maybe made therein without departing from the spirit or scope of theinvention as defined by the following claims.

What is claimed is:
 1. A display apparatus comprising: a base substrateincluding a hole area through which light passes, a hole peripheral areawhich is a non-display area surrounding the hole area, and a displayarea surrounding the hole peripheral area, wherein the display areaincludes a plurality of pixels to display an image; an insulating layerdisposed on the base substrate in the hole peripheral area and thedisplay area except for the hole area; a via insulating layer disposedon the insulating layer in the hole peripheral area and the display areaexcept for the hole area; and a thin film encapsulation layer includinga first inorganic film and a second inorganic film, which are disposedin the hole peripheral area and the display area except for the holearea on the base substrate on which the via insulating layer isdisposed.
 2. The display apparatus of claim 1, wherein the basesubstrate is a rigid substrate.
 3. The display apparatus of claim 1,wherein a roughness of a surface of the base substrate in the hole areais greater than a roughness of the surface of the base substrate in thehole peripheral area and the display area.
 4. The display apparatus ofclaim 1, further comprising: a first electrode disposed on the viainsulating layer in the display area; a light emitting layer disposed onthe first electrode; and a second electrode disposed on the lightemitting layer.
 5. The display apparatus of claim 4, wherein a groovesurrounding the hole area is defined in the via insulating layer in thehole peripheral area.
 6. The display apparatus of claim 5, wherein thesecond electrode has a disconnected portion in the groove of the viainsulating layer.
 7. The display apparatus of claim 4, wherein thesecond electrode is spaced apart from the hole area.
 8. The displayapparatus of claim 7, wherein the light emitting layer includes a holeinjection layer, a hole transport layer, an electron transport layer,and an electron injection layer, which are disposed between the secondelectrode and the base substrate, wherein the light emitting layer isdisposed to correspond to the plurality of pixels, and the holeinjection layer, the hole transport layer, the electron transport layer,and the electron injection layer are spaced apart from the hole area. 9.The display apparatus of claim 8, wherein the first inorganic film ofthe thin film encapsulation layer is disposed directly on the basesubstrate in the hole peripheral area.
 10. The display apparatus ofclaim 1, wherein the hole peripheral area includes a heat affected zoneat a portion of the hole peripheral area in contact with the hole area,and the via insulating layer is carbonized in the heat affected zone.11. The display apparatus of claim 1, wherein the hole peripheral areaincludes a heat affected zone at a portion of the hole peripheral areain contact with the hole area, and wherein a height of the viainsulating layer in the heat affected zone is greater than a height ofthe via insulating layer in the display area and the hole peripheralarea.
 12. The display apparatus of claim 1, further comprising: a coverwindow disposed on the thin film encapsulation layer; and an opticalclear adhesive film disposed between the thin film encapsulation layerand the cover window, wherein the base substrate and the cover windoware spaced apart from each other in the hole area.
 13. The displayapparatus of claim 12, wherein a hole optical clear adhesive film isdisposed between the base substrate and the cover window in the holearea.
 14. The display apparatus of claim 1, further comprising: a coverwindow disposed on the thin film encapsulation layer; and an opticalclear resin disposed between the cover window and the thin filmencapsulation layer, wherein the optical clear resin is disposed betweenthe base substrate and the cover window in the hole area.
 15. A methodof manufacturing a display apparatus including a hole area through whichlight passes, a hole peripheral area which is a non-display areasurrounding the hole area, and a display area surrounding the holeperipheral area, wherein the display area includes a plurality of pixelsto display an image, the method comprising: providing an insulatinglayer on a base substrate; providing a via insulating layer on theinsulating layer; sequentially providing a first electrode, a lightemitting layer, and a second electrode on the via insulating layer;providing a thin film encapsulation layer including a first inorganicfilm and a second inorganic film on the second electrode; and exposing atop surface of the base substrate by removing layers on the basesubstrate in the hole area.
 16. The method of claim 15, wherein theexposing the top surface of the base substrate comprises removing thelayers on the base substrate in the hole area by using a laser, and aroughness of a surface of the base substrate in the hole area is greaterthan a roughness of the surface of the base substrate in the holeperipheral area and the display area.
 17. The method of claim 16,wherein when the top surface of the base substrate is exposed, a heataffected zone is formed at a portion of the hole peripheral area incontact with the hole area by the laser, and the via insulating layer iscarbonized in the heat affected zone.
 18. The method of claim 15,wherein the providing the via insulating layer comprises forming agroove surrounding the hole area in the via insulating layer in the holeperipheral area.
 19. The method of claim 15, wherein the exposing thetop surface of the base substrate comprises removing layers on the basesubstrate in a part of the hole peripheral area after the secondelectrode is provided.
 20. The method of claim 15, further comprising:providing an optical clear adhesive film or an optical clear resin onthe thin film encapsulation layer; and attaching a cover window onto theoptical clear adhesive film or the optical clear resin.